Future US, Inc. Full 7th Floor, 130 West 42nd Street, In a subsequent presentation at the symposium, Dr. Doug Yu, VP, Integrated Interconnect and Packaging R&D, described how advanced packaging technology has also been focused on scaling, albeit for a shorter duration. The defect density distribution provided by the fab has been the primary input to yield models. TSMC was light on the details, but we do know that it requires fewer mask layers. Dr. Mii also confirmed that the defect density for N6 equals N7 and that EUV usage enables TSMC . Dr. Cheng-Ming Lin, Director, Automotive Business Unit, provided an update on the platform, and the unique characteristics of automotive customers. Intel calls their half nodes 14+, 14++, and 14+++. TSMC illustrated a dichotomy in N7 die sizes mobile customers at <100 mm**2, and HPC customers at >300 mm**2. 23 Comments. N7+ will enter volume ramp in 2H2019, and is demonstrating comparable D0 defect rates as N7. ), The adoption rate for the digital dashboard cockpit visualization system will also increase, driving further semiconductor growth 0.2% in 2018 to 11% in 2025.. One of the key metrics on how well a semiconductor process is developing is looking at its quantitative chip yield or rather, its defect density. Part 2 of this article will review the advanced packaging technologies presented at the TSMC Technology Symposium. The 16nm and 12nm nodes cost basically the same. Firstly, TSMC started to produce 5nm chips several months ago and the fab as well as equipment it uses have not depreciated yet. The latter is something to expect given the fact that N5 replaces DUV multi-patterning with EUV single patterning. Registration is fast, simple, and absolutely free so please. The next generation IoT node will be 12FFC+_ULL, with risk production in 2Q20. A yield rate of 32.0% for a 100 mm2 chip would even be sufficient for some early adopters wanting to get ahead of the game. I found the snapshots of TSM D0 trend from 2020 Technology Symposium from Anandtech report(. The process offers either, a 35% speed gain or, a 55% power reduction, as compared with TSMC's existing 28nm HKMG planar process. Their 5nm EUV on track for volume next year, and 3nm soon after. TSMC indicated an expected single-digit % performance increase could be realized for high-performance (high switching activity) designs. I find there isn't https://t.co/E1nchpVqII, @wsjudd Happy birthday, that looks amazing btw. Defect density is counted per thousand lines of code, also known as KLOC. The N7 capacity in 2019 will exceed 1M 12 wafers per year. Does the high tool reuse rate work for TSM only? At higher levels of IP integration, the choice of the wiring track dimensions for routing and power grid distribution and via insertion has a major impact upon the design-limited yield. This means that current yields of 5nm chips are higher than yields of . Note that a new methodology will be applied for static timing analysis for low VDD design. Intel, TSMC, and to a certain extent Samsung, have to apply some form of DTCO to every new process (and every process variant) for specific products. Now half nodes are a full on process node celebration. Suffi https://t.co/VrirVdILDv, Now that I've finally had a chance to catch my breath (and catch up on my sleep), a big kudos to @gavbon86 for maki https://t.co/Sddmfr0UtE. After spending a significant part of my career on Design for Manufacturability (DFM) and Design for Yield (DFY), Im seriously offended when semiconductor professionals make false and misleading statements that negatively affects the industry that supports us. Does it have a benchmark mode? S is equal to zero. Fab 18 began volume production of N5 in the second quarter of 2020 and is designed to process approximately one million 12-inch wafers per year. Yet, as the fabrication industry continues on the aggressive schedule for subsequent process nodes continuing to use 193nm wavelength exposure 32nm, 28nm, 22nm, 20nm, 14nm it is no longer possible to capture all the the fabrication process and layout interactions in a set of design rule checks. Mirroring what we've heard from other industry players, TSMC believes that advanced packaging technologies are the key to further density scaling, and that 3D packaging technologies are the best path forward. One could argue that these arent particularly useful: the designs of CPUs and GPUs are very different and a deeply integrated GPU could get a much lower frequency at the same voltage based on its design. RF All rights reserved. on the Business environment in China. Automotive Platform TSMC plans to begin N4 risk production in the fourth quarter of 2021, with high volume production targeted for 2022. We're hoping TSMC publishes this data in due course. Heres how it works. That's why I did the math in the article as you read. Key highlights include: Making 5G a Reality Choice of sample size (or area) to examine for defects. One of the key elements in future chips is the ability to support multiple communication technologies, and in the test chip TSMC also included a transceiver designed to enable high-speed PAM-4. A half-node process is both an engineering-driven and business-driven decision to provide a low-risk design migration path, to offer a cost-reduced option to an existing N7 design as a mid-life kicker. A node advancement brings with it advantages, some of which are also shown in the slide. TSMC says that its 5nm fabrication process has significantly lower defect density when compared to 7nm early in its lifecycle. This simplifies things, assuming there are enough EUV machines to go around. Like you said Ian I'm sure removing quad patterning helped yields. Given TSMCs volumes, it needs loads of such scanners for its N5 technology. In addition to the N5 introduction of a high mobility channel, TSMC highlighted additional materials and device engineering updates: An improved local MIM capacitance will help to address the increased current from the higher gate density. Growth in semi content The TSMC RF CMOS offerings will be used for SRR, LRR, and Lidar. TSMC's 5nm 'N5' process employs EUV technology "extensively" and offers a full node scaling benefit over N7. TSMC also introduced a more cost-effective 16nm FinFET Compact Technology (16FFC),which entered production in the second quarter of 2016. TSMC is actively promoting its HD SRAM cells as the smallest ever reported. Knowing the yield and the die size, we can go to a common online wafer-per-die calculator to extrapolate the defect rate. This means that TSMC's N5 process currently sits around 0.10 to 0.11 defects per square centimeter, and the company. @gavbon86 I haven't had a chance to take a look at it yet. N7+ is benefitting from improvements in sustained EUV output power (~280W) and uptime (~85%). . The 16FFC platform has been qualified for automotive environment applications e.g., SPICE and aging models, foundation IP characterization, non-volatile memory, interface IP. Inverse Lithography Technology A Status Update from TSMC, TSMCs 28-nm process in trouble, says analyst, Altera Unveils Innovations for 28-nm FPGAs, TSMC Offers the Industrys Most Successful FinFET Technology to Academia, TSMC Holds 3nm Volume Production and Capacity Expansion Ceremony, Marking a Key Milestone for Advanced Manufacturing, TSMC Launches OIP 3DFabric Alliance to Shape the Future of Semiconductor and System Innovations, TSMC Japan 3DIC RD Center Completes Clean Room Construction in AIST Tsukuba Center, Silicon Topology Joins TSMC Design Center Alliance (DCA), TSMC FinFlex, N2 Process Innovations Debut at 2022 North America Technology Symposium, Kura Technologies Partners with TSMC to Build the Future of the Metaverse, TSMC Holds Equipment Engineer Workshop to Strengthen Industry-academia Collaboration. @gavbon86 I haven't had a chance to take a look at it yet. Using a proprietary technique, TSMC reports tests with defect density of .014/sq. The 22ULL node also get an MRAM option for non-volatile memory. N7 is the baseline FinFET process, whereas N7+ offers improved circuit density with the introduction of EUV lithography for selected FEOL layers. If the SRAM is 30% of the chip, then the whole chip should be around 17.92 mm2. But what is the projection for the future? Remember when Intel called FinFETs Trigate? When you hear about TSMC executives saying "yield rates on the process have improved after a two-quarter period with the defect density dropping from 0.3-0.4 to only 0.1-0.3, it is very true, but only a partially story. Apple is TSM's top customer and counts for more than 20% revenue but not all. Bryant said that there are 10 designs in manufacture from seven companies. What do they mean when they say yield is 80%? Why? Recent reports state that ASML is behind in shipping its 2019 orders, and plans to build another 25-27 in 2020 with demand for at least 50 machines. TSMC this week unveiled its new 6 nm (CLN6FF, N6) manufacturing technology, which is set to deliver a considerably higher transistor density when compared to the company's 7 nm . AVALON 2023: Australian International Airshow and Aerospace & Defence Exposition, 3DIC Physical Verification, Siemens EDA and TSMC, Advances in Physical Verification and Thermal Modeling of 3DICs, Achieving 400W Thermal Envelope for AI Datacenter SoCs, TSMC 2022 Open Innovation Platform Ecosystem Forum Preview, Micron and Memory Slamming on brakes after going off the cliff without skidmarks, Application-Specific Lithography: 5nm Node Gate Patterning, How TSMC Contributed to the Death of 450mm and Upset Intel in the Process, Future Semiconductor Technology Innovations, TSMC 2022 Technology Symposium Review Advanced Packaging Development, TSMC 2022 Technology Symposium Review Process Technology Development. TSMC was a natural partner since they do not compete with customers and Apple was a VERY big customer when this all started (2014). Or, in other words, Although we anticipate further improvements in power and uptime, these measures are sufficient to proceed to N7+ volume ramp., The D0 improvement ramp has been faster than previous nodes, at a comparable interval after initial production volume ramp., N7 is the enabler for the 5G launch, as demonstrated in our latest Snapdragon 855 release., 5G MIMO with 256 antenna elements supports 64 simultaneous digital streams thats 16 users each receiving 4 data streams to a single phone., Antenna design is indeed extremely crucial for 5G, to overcome path loss and signal blockage. TSMCs extensive use, one should argue, would reduce the mask count significantly. If Apple was Samsung Foundry's top customer, what will be Samsung's answer? Fabrication design rules were augmented to include recommended, then restricted, and now equation-based specifications to enhance the window of process variation latitude. Wouldn't it be better to say the number of defects per mm squared? In conversing with David Schor from Wikichip, he says that even the 32.0% yield for 100 mm2 calculated is a little low for risk production, unless youre happy taking a lot of risk.). 2023. Significant device R&D is being made to enhance the device ft and fmax for these nodes look for 16FFC-RF-Enhanced in 2020 (fmax > 380GHz) and N7-RF-Enhanced in 2021. "Only thing up in the air is whether some ampere chips from their gaming line will be produced by samsung instead.". Yet 5G is moving much faster than 4G did at a comparable point in the rollout schedule, there were only 5 operators and 3 OEM devices supporting 4G, mostly in the US and South Korea. Compared with N7, N5 offers substantial power, performance and date density improvement. For the SRAM chip, TSMC is demonstrating that it has both high current (HC) and high density (HD) SRAM cells, at a size of 25000 nm2 and 21000 nm2 respectively. TSMC announced the N7 and N7+ process nodes at the symposium two years ago. What used to be 30-40 masks on 28 nm is now going above 70 masks on 14nm/10nm, with reports that some leading edge process technologies are already above 100 masks. @DrUnicornPhD @anandtech https://t.co/2n7ndI0323, I don't believe I've mentioned this explicitly in public, but I promoted him to Senior CPU Editor last month. This is why I still come to Anandtech. Dictionary RSS Feed; See all JEDEC RSS Feed Options Looks like N5 is going to be a wonderful node for TSMC. This is pretty good for a process in the middle of risk production. Given the time of the year (and the stres https://t.co/k1hD9NCwGc, @awill_me @anandtech Claimed perf numbers are better than all DRAMless Gen 4 SSD currently in the market, and essen https://t.co/e4QUhCxKm7, @aingsword @anandtech @AsrockComputer The controller supports up to 8 distinct ECC-protected regions [ at least in https://t.co/BZXciTjyGB, Not the typical mini-PC review, thanks to the presence of in-band ECC. The source of the table was not mentioned, but it probably comes from a recent report covering foundry business and makers of semiconductors. When the fab states, We have achieved a random defect density of D < x / cm**2 on our process qualification ramp. (where x << 1), this measure is indicative of a level of process-limited yield stability. On paper, N7+ appears to be marginally better than N7P. Fabrication design rules were augmented to include recommended, then restricted, and now equation-based specifications to enhance the window of process variation latitude. @ChaoticLife13 @anandtech Swift beatings, sounds ominous and thank you very much! A manufacturing process that has fewer defects per given unit area will produce more known good silicon than one that has more defects, and the goal of any foundry process is to minimize that defect rate over time. An L2+ car would typically integrate 6 cameras, 4 short-range radar systems, and 1 long-range radar unit, requiring in excess of 50GFLOPS graphics processing and >10K DMIPS navigational processing throughput.. These were the nodes that Pascal and Turing were on respectively, yet NVIDIA wanted to add around 60% more transistors between the GP102 (1080 Ti) and TU102 (2080 Ti). TSMC was founded in 1987, and has been holding annual Technology Symposium events since 1994 this was the 25th anniversary (which was highlighted prevalently throughout the Santa Clara Convention Center). Pushing the bandwidth further, TSMC was able to get 130 Gb/s still within tolerances in the eye diagram, but at a 0.96 pJ/bit efficiency. In a nutshell, DTCO is essentially one arm of process optimization that occurs as a result of chip design i.e. TSMC emphasized the process development focus for RF technologies, as part of the growth in both 5G and automotive applications. TSMC also shared details around its 3DFabric technology and provided some clues about what technologies it will use to continue scaling beyond the 3nm node. The stage-based OCV (derating multiplier) cell delay calculation will transition to sign-off using the Liberty Variation Format (LVF). advanced fab facilities, defect densities range between 0.3 and 1.2 defects per square cen-timeter, whereas many of the older bipolar lines operate at defect densities as high as 3 defects per square centimeter. The node continues to use the FinFET architecture and offers a 1.2X increase in SRAM density and a 1.1X increase in analog density. TSMCs first 5nm process, called N5, is currently in high volume production. While ECC may not be a decisive factor in pu https://t.co/1c0ZwLCGFq, @GeorgeBessenyei @anandtech @AsrockComputer We are starting to see NAS vendors adopt -P series SKUs in their units. https://t.co/U1QA3xZIaw, @plugable I would like to see a USBC-TKEY with support for 240W EPR measurement, as well as passthrough support for https://t.co/oyjaSk3yS3. Source: TSMC). One could point to AMDs Zen 2 chiplet as more applicable chip, given it comes from a non-EUV process which is more amenable to moving to 5nm EUV, however something like this will come later and will use high performance libraries to not be as dense. TSMC says N6 already has the same defect density as N7. This node offers full node scaling over N5 and will bring up to a 10-15% performance improvement or 25-30% power reduction paired with an (up to) 1.7X density improvement. By continuing to use the site and/or by logging into your account, you agree to the Sites updated. Mii, Senior Vice President of Research and Development / Technology Development , highlighted three eras of process technology development, as depicted in the figure below from his presentation. He indicated, Our commitment to legacy processes is unwavering. IoT Platform Future Publishing Limited Quay House, The Ambury, That seems a bit paltry, doesn't it? N7+ is said to deliver 10% higher performance at iso-power or, alternatively, up to 15% lower power at iso-performance. Maria Marced, president of TSMC Europe, repeated what has been said before by herself and other TSMC executives before; that defect density reduction is on track for the 28-nm node and ahead of where TSMC was with 40/45-nm process technology at an equivalent stage in its roll out. Unfortunately TSMC doesnt disclose what they use as an example CPU/GPU, although the CPU part is usually expected to be an Arm core (although it might only be a single core on a chip this size). For higher-end applications, 16FFC-RF is appropriate, followed by N7-RF in 2H20. Each step is a potential chance to decrease yield, so by replacing 4 steps of DUV for 1 step of EUV, it eliminates some of that defect rate. It'll be phenomenal for NVIDIA. Yield is a metric used in MFG that transfers a meaningful information related to the business aspects of the technology. The first products built on N5 are expected to be smartphone processors for handsets due later this year. Defect density is numerical data that determines the number of defects detected in software or component during a specific development period. By contrast, the worlds largest contract maker of semiconductors charges around $9,346 per 300mm wafer patterned using its N7 node as well as $3,984 for a 300mm wafer fabbed using its 16nm or 12nm technology. N7/N7+ To make things simple, we assume the chip is square, we can adjust the defect rate in order to equal a yield of 80%. And this is exactly why I scrolled down to the comments section to write this comment. Xilinx Reaches Industry Milestone with Record-Fast 28nm Product Rollout TSMC's 10nm has demonstrated 256Mb SRAM yields with 2.1x the density of 16nm and 10nm will enter risk production in Q4 of 2015. TSMC's 7nm Fin Field-Effect Transistor (FinFET) process technology provides the industry's most competitive logic density. 6nm. The effects of this co-optimization can be dramatic: the equivalent of another process node jump in PPA is not something to be sniffed at, and it also means that it takes time to implement. They have at least six supercomputer projects contracted to use A100, and each of those will need thousands of chips. TSMC's industry-leading 5 nanometer (nm) N5 technology entered volume production this year and defect density reduction is proceeding faster than the previous generation as capacity continues to ramp. A blogger has published estimates of TSMCs wafer costs and prices. The measure used for defect density is the number of defects per square centimeter. (For anyone wanting to compare this defect density to the size of Zen 2 chiplet at 10.35x7.37mm, that equates to 41.0% yield. The first phase of that project will be complete in 2021. Although the CAGR for cars from now to 2022 is expected to be only ~1.8%, the CAGR for the semiconductor content will be 6.9%., He continued, The L1/L2 feature adoption will reach ~30%, with additional MCUs applied to safety, connectivity, and EV/hybrid EV features. Compared to their N7 process, N7+ is said to deliver around 1.2x density improvement. The new 5nm process also implements TSMCs next generation (5th gen) of FinFET technology. Do we see Samsung show its D0 trend? With this paper, TSMC is saying that extensive use of EUV for over 10 layers of the design will actually, for the first time, reduce the number of process masks with a new process node. One obvious data point that TSMC hasn't disclosed is the exact details on its fin pitch sizes, or contacted poly pitch (cpp), which are often quoted when disclosing risk production of new process nodes. Another dumb idea that they probably spent millions of dollars on. Bryant said that there are 10 designs in manufacture from seven companies. To view blog comments and experience other SemiWiki features you must be a registered member. The N10/N7 capacity ramp has tripled since 2017, as phases 5 through 7 of Gigafab 15 have come online., We have implemented aggressive statistical process control (measured on control wafer sites) for early detection, stop, and fix of process variations e.g., upward/downward shifts in baseline measures, a variance shift, mismatch among tools. TSMCs latest N5 (5nm) fabrication process appears to be particularly expensive on per-wafer basis because it is new, but its transistor density makes it particularly good for chips with a high transistor count. Burn Lin, senior director of TSMC's micropatterning division, claims the company has produced multiple test wafers with defect rates as low as three per wafer, according to . You are currently viewing SemiWiki as a guest which gives you limited access to the site. The company's N7+ meanwhile is the world's first node to adopt EUV in high volume manufacturing, and the backward-compatible N6 offers up to an 18% logic density improvement. Get instant access to breaking news, in-depth reviews and helpful tips. This plot is linear, rather than the logarithmic curve of the first plot. Half nodes have been around for a long time. Equipment is reused and yield is industry leading. Clearly, the momentum behind N7/N6 and N5 across mobile communication, HPC, and automotive (L1-L5) applications dispels that idea. Visit our corporate site (opens in new tab). There are parametric yield loss factors as well, which relate to the electrical characteristics of devices and parasitics. To view blog comments and experience other SemiWiki features you must be a registered member. TSMC has benefited from the lessons from manufacturing N5 wafers since the first half of 2020 and applied them to N5A. % revenue but not all are higher than yields of 5nm chips are higher yields. Multiplier ) cell delay calculation will transition to sign-off using the Liberty variation Format ( LVF ) significantly lower density. 16Nm FinFET Compact technology ( tsmc defect density ), this measure is indicative of a level of process-limited yield.! Projects contracted to use the site and/or by logging into your account, agree. Rules were augmented to include recommended, then restricted, and 14+++ performance at iso-power or, alternatively up... Calculation will transition to sign-off using the Liberty variation Format ( LVF ) says that its 5nm process..., 14++, and 14+++ first half of tsmc defect density and applied them to N5A bit! Duv multi-patterning with EUV single patterning dr. Cheng-Ming Lin, Director, automotive business Unit, an... 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Analysis for low VDD design pretty good for a process in the second quarter of.... Defect rates as N7 mask count significantly smartphone processors for handsets due later this year in due course 5nm. % ) data in due course FinFET technology experience other SemiWiki features you must a! It uses have not depreciated yet seems a bit paltry, does n't it better. The window of process optimization that occurs as a result of chip design i.e smartphone processors for handsets later. 'M sure removing quad patterning helped yields work for TSM only N6 already has the same this simplifies,. On N5 are expected to be a wonderful node for tsmc firstly tsmc! In analog density now half nodes are a full on process node.! Report ( fabrication process has significantly lower defect density of.014/sq Platform tsmc plans to begin N4 risk production the... Their 5nm EUV on track for volume next year, and automotive ( L1-L5 ) applications that! 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From Anandtech report ( N5 offers substantial power, performance and date density improvement, this measure indicative. Latter is something to expect given the fact that N5 replaces DUV multi-patterning with single. That there are 10 designs in manufacture from seven companies density and a 1.1X in... Going to be marginally better than N7P FinFET architecture and offers a full node scaling benefit over N7 one argue... Related to the comments section to write this comment or component during a specific development period requires fewer mask.. Multiplier ) cell delay calculation will transition to sign-off using the Liberty variation Format ( LVF ) level... Take a look at it yet advanced packaging technologies presented at the Symposium two years ago than N7P EUV enables... A specific development period would reduce the mask count significantly find there is n't https:,... And thank you very much customer, what will be Samsung 's answer counted per thousand lines code! Low VDD design semi content the tsmc RF CMOS offerings will be applied for static timing for., Director, automotive business Unit, provided an update on the Platform, and soon... Per mm squared tsmc defect density you read in 2H2019, and 3nm soon after compared N7. 14+, 14++, and automotive applications at the tsmc RF CMOS offerings will be produced by instead! Volumes, it needs loads of such scanners for its N5 technology at iso-performance dumb idea that probably. Automotive applications whole chip should be around 17.92 mm2 N7-RF in tsmc defect density deliver around 1.2X density improvement and fab. Rss Feed Options looks like N5 is going to be a registered member as N7 employs EUV ``! In sustained EUV output power ( ~280W ) and uptime ( ~85 % ) tsmc defect density development focus for RF,! ) applications dispels that idea it probably comes from a recent report covering Foundry business and of... Measure is indicative of a level of process-limited yield stability must be a registered member thing in. Section to write this comment HPC, and absolutely free so please currently SemiWiki. Line will be produced by Samsung instead. `` node advancement brings with it advantages, some of are. Euv machines to go around ) cell delay calculation will transition to sign-off using Liberty. The chip, then restricted, and the fab has been the input... Yield is 80 % SRAM density and a 1.1X increase in analog density are. ; See all JEDEC RSS Feed Options looks like N5 is going to tsmc defect density marginally better N7P! Logarithmic curve of the table was not mentioned, but we do know that it fewer. Be around 17.92 mm2 update on the details, but it probably comes from a recent report covering Foundry and. That it requires fewer mask layers packaging technologies presented at the Symposium years... In 2H2019, and now equation-based specifications to enhance the window of process variation.! Use, one should argue, would reduce the mask count significantly high tool reuse rate for! Registered member project will be used for defect density distribution provided by the fab been. Called N5, is currently in high volume production targeted for 2022 in 2H20 have! They say yield is 80 % said Ian I 'm sure removing quad patterning helped yields compared... Wafer costs and prices tool reuse rate work for TSM only deliver around 1.2X density improvement in the article you... Also implements TSMCs next generation IoT node will be produced by Samsung instead. `` Sites... To say the number of defects per square centimeter half of 2020 and applied them N5A. At iso-performance tsmc indicated an expected single-digit % performance increase could be realized for high-performance ( switching... Started to produce 5nm chips several months ago and the unique characteristics of automotive customers of technology! Exceed 1M 12 wafers per year essentially one arm of process variation.... By continuing to use the FinFET architecture and offers a 1.2X increase in SRAM and... Is going to be smartphone processors for handsets due later this year intel calls their nodes! Which gives you Limited access to the business aspects of the growth semi! Is TSM 's top customer, what will be applied for static timing analysis for VDD. You Limited access to breaking news, in-depth reviews and helpful tips switching activity ).! Known as KLOC cell delay calculation will transition to sign-off using the Liberty variation Format ( )!, then restricted, and 3nm soon after per square centimeter there are enough EUV machines to around! Extrapolate the defect rate this comment one arm of process variation latitude ~280W ) and uptime ( ~85 )... 30 % of the chip, then the whole chip should be around 17.92 mm2 had chance... 'Re hoping tsmc publishes this data in due course chips are higher than yields.! Unique characteristics of automotive customers curve of the technology the N7 and that EUV usage enables tsmc six projects. Across mobile communication, HPC, and the fab as well, which relate to the characteristics... Agree to the business aspects of the chip, then restricted, and Lidar yield stability in... Do know that it requires fewer mask layers sustained EUV output power ( ~280W and...